IGZO (Indium Gallium Zinc Oxide) Sputtering Targets

InquiryData sheet
Indium Gallium Zinc Oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxidesemiconductors.

Material Notes of IGZO Sputtering Targets

Indium Gallium Zinc Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. 

Relative Density > 90%
Related Products